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SD4100
PRODUCT DEVELOPMENT DATA SHEET
This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to introduction and SGS-THOMSON assumes no liability for use of information contained herein.
RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS
.470 .28 .CLASS .DESI .HI .I .GAI .P .P
- 860 MHz VOLTS AB PUSH PULL GNED FOR HIGH POWER LINEAR OPERATION GH SATURATED POWER CAPABILITY NTERNAL INPUT/OUTPUT MATCHING NETWORKS PROVIDE HIGH BALANCED IMPEDANCES FOR SIMPLIFIED CIRCUIT DESIGN AND WIDE INSTANTANEOUS BANDWIDTH N = 8.5 dB MIN. OUT = 100 W MIN. CW OUT = 125 W PEAK SYNC.
.437 x .450 4LFL (M173) epoxy sealed BRANDING ORDER CODE SD4100 SD4100
PIN CONNECTION
DESCRIPTION The SD4100 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in UHF and Band IV, V television transmitters and transposers. ABSOLUTE MAXIMUM RATINGS (T case = 25 C)
Symbol Parameter Value Unit
1. Collector 2. Base
3. Emitter
VCBO VCEO VEBO IC PDISS TJ TSTG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature (+25C)
65 30 3.5 16 220 +200 - 65 to +150
V V V A W C C
THERMAL DATA RTH(j-c)
July 1993
Junction-Case Thermal Resistance
0.8
C/W
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SD4100
ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVCEO BVCER BVEBO ICEO hFE DYNAMIC
Symbol
IC = 40 mA IC = 80 mA IC = 120 mA IE = 20 mA VCE = 28 V VCE = 5 V
IE = 0 mA IB = 0 mA RBE = 75 IC = 0 mA IB = 0 mA IC = 4 A
65 30 40 3.5 -- 25
-- -- -- -- -- --
-- -- -- -- 10 120
V V V V mA --
Test Conditions
Value Min. Typ. Max.
Unit
COB
f = 1 MHz VCB = 28 V (each side) COB is not measurable due to Internal Output Matching Network
--
50
--
pF
DYNAMIC (CW)
Symbol Test Conditions Value Min. Typ. Max. Unit
P1dB GP c
f = 860 MHz PREF = 25 W f = 860 MHz POUT = 100 W f = 860 MHz POUT = 100 W
VCC = 28 V ICQ = 200 mA VCC = 28 V ICQ = 200 mA VCC = 28 V ICQ = 200 mA
100 8.5 55
-- -- --
-- -- --
W dB %
DYNAMIC (Video) (Standard Black Level)
Symbol Test Conditions Value Min. Typ. Max. Unit
GP P1dB P1dB
f = 860 MHz POUT = 125 W f = 860 MHz PREF = 25 W f = 860 MHz PREF = 25 W
VCC = 28 V ICQ = 200 mA VCC = 28 V ICQ = 200 mA VCC = 32 V ICQ = 100 mA
8.5 125 150
-- -- --
-- -- --
dB W W
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SD4100
PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0173
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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